Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator.

It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate.

An alternative to tunnel injection is the spin injection.

See also

References



    This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.