International Workshop on Nitride Semiconductors
AbbreviationIWN
DisciplineMaterials Science Solid State Physics Electronic Engineering
Publication details
PublisherWiley-VCH Physica Status Solidi
History2000–
FrequencyBiennial

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki (Nagoya University, Meijo University) and Hiroshi Amano (Nagoya University), who are Nobel laureates in physics (2014)

- IWN2018 was held 11–16 November 2018 in Kanazawa, Japan, and chaired by Hiroshi Fujioka (the University of Tokyo, Japan)[1]

- IWN2016 was held 2–7 October 2016 in Orlando, United States, and jointly chaired by Alan Doolittle (Georgia Institute of Technology and Tomas Palacios (Massachusetts Institute of Technology, USA)[2]

- IWN2012 was held 14–19 October 2012 in Sapporo, Japan and chaired by Hiroshi Amano (Nagoya University, Japan).

Conference list

Conference nameLocationDates
IWN2022[3] Germany Berlin, Germany 9–14 October 2022
IWN2018[4] Japan Kanazawa, Japan 11–16 November 2018
IWN2016[5] United States Orland, United States 2–8 October 2016
IWN2014Poland Wrocław, Poland24–29 August 2014
IWN2012[6]Japan Sapporo, Japan14–19 October 2012
IWN2010[7]United States Tampa, United States19–24 September 2010
IWN2008[8][9]Switzerland Montreux, Switzerland6–10 October 2008
IWN2006[10]Japan Kyoto, Japan22–27 October 2006
IWN2004[11]United States Pittsburgh, USA19–23 July 2004
IWN2002[12]Germany Aachen, Germany22–25 July 2002
IWN2000[13]Japan Nagoya, Japan24–27 September 2000

See also

References

  1. ↑ "IWN2018".
  2. ↑ "IWN2016" (PDF). Archived from the original (PDF) on 2020-03-25. Retrieved 2022-06-02.
  3. ↑ "International Workshop on Nitride Semiconductors 2022". www.iwn2022.org. Retrieved 2022-10-10.
  4. ↑ "International Workshop on Nitride Semiconductors 2018". www.iwn2018.jp. Retrieved 2016-11-01.
  5. ↑ "International Workshop on Nitride Semiconductors (IWN 2016)". www.mrs.org. Retrieved 2016-11-01.
  6. ↑ "Iwn2012". Archived from the original on 2011-09-18. Retrieved 2011-07-16.
  7. ↑ "Iwn 2010". Archived from the original on 2011-02-16. Retrieved 2011-02-14.
  8. ↑ "Iwn 2008". Archived from the original on 2010-09-29. Retrieved 2011-02-14.
  9. ↑ N. Grandjean, M. Ilegems, T. Suski and R. Butté (2009) "Preface: Phys. Status Solidi C 6/S2" Physica Status Ssolidi (c) 6 S289–S292 doi:10.1002/pssc.200960059
  10. ↑ K. Akimoto, S. Chichibu and T. Suemasu (2007) "Preface: phys. stat. sol. (c) 4/7" Physica Status Solidi C 4 2204–2208 doi:10.1002/pssc.200790011
  11. ↑ "Proceedings of the International Workshop on Nitride Semiconductors (IWN 2004)" Physica Status Solidi C 1 issue 13 ISBN 978-3-527-40568-8
  12. ↑ A. Hoffmann and A. Rizzi (2003) "Editor's Preface: phys. stat. sol. (c) 0/1" Physica Status Solidi C 0 21 doi:10.1002/pssc.200390028
  13. ↑ "Proceedings of International Workshop on Nitride Semiconductors" ISBN 4-900526-13-4
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