Bernard S. Meyerson
In the World Economic Forum video Launch of the Top 10 Emerging Tech of 2021
Born (1954-06-02) June 2, 1954
New York, New York
Education
OccupationSolid state physicist
AwardsJ. J. Ebers Award (2000)

Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.

Biography

Meyerson is a native of New York City, born on June 2, 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]

Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]

References

  1. 1 2 "B. Meyerson". American Institute of Physics. Retrieved February 22, 2022.
  2. 1 2 3 "2011 George E. Pake Prize Recipient". American Physical Society. Retrieved February 22, 2022.
  3. ↑ "APS fellow archive". American Physical Society. Retrieved February 22, 2022.
  4. ↑ "Past J.J. Ebers Award Winners". Electron Devices Society, IEEE. Retrieved February 22, 2022.
  5. ↑ "Dr. Bernard S. Meyerson". United States National Academy of Engineering. Retrieved February 22, 2022.
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