GDDR7 SDRAM
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory
Type of RAM
DeveloperJEDEC
TypeSynchronous dynamic random-access memory
Generation7th generation
PredecessorGDDR6 SDRAM

Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, "double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM (graphics DDR SDRAM), and is the successor to GDDR6.

History

  • At Samsung Tech Day 2022, Samsung announced GDDR7 as the successor of GDDR6X, which could deliver up to 36 GT/s.[1] Samsung later announced two months later that it would use PAM-3 signaling to achieve the highest transfer rate.[2]
  • On March 8, 2023, Cadence announced the verification solution tool for preliminary GDDR7 SDRAM production.[3]
  • On June 30, 2023, Micron announced that it will be manufactured using 1ß node (equivalent to 12–10 nm process node), slated to release in H1 2024.[4]
  • On July 18, 2023, Samsung announced the first generation of GDDR7, which can reach up to 32 Gbps per pin (33% higher bandwidth per pin compared to 24 Gbps per pin on GDDR6), 40% higher bandwidth (1.5 TB/s) compared to GDDR6 (1.1 TB/s) and 20% more energy efficient. For packaging material, it will use epoxy molding compound (EMC) alongside with IC architecture optimization, which will reduce thermal resistance by 70%.[5] Later, on a Q&A session, Samsung mentioned that it will be manufactured using D1z node (equivalent to 15–14 nm[6]) and will operate on 1.2V. A 1.1V version with reduced clockspeeds will also be made available at some point in to the future after the release of the 1.2V version.[7]

Technologies

GDDR7 SDRAM introduced PAM-3 signaling (Pulse Amplitude Module-3 level) instead of NRZ. PAM-3 is 20% more energy-efficient than NRZ with a higher bandwidth but has lower equipment requirements than PAM-4, making it cheaper. PAM-3 is using 1.5 bits per cycle, while NRZ uses only 1 bit per cycle.[8] GDDR7 SDRAM also will be manufactured using 1ß node (equivalent to 12–10 nm process node), which will be the last DRAM production process that will rely on deep ultraviolet (DUV) lithography tools.

See also

References

  1. ↑ "Samsung announces 36 Gbps GDDR7 memory standard, aims to release V-NAND storage solutions with 1000 layers by 2030". Notebookcheck. 2022-10-06. Retrieved 2023-06-30.
  2. ↑ Discuss, btarunr (2022-12-05). "Samsung Reveals GDDR7 Memory Uses PAM3 Signalling to Achieve 36 Gbps Data-Rate". TechPowerUp. Retrieved 2023-06-30.
  3. ↑ "Cadence announces first GDDR7 verification solution". VideoCardz.com. Retrieved 2023-06-30.
  4. ↑ "Micron could introduce GDDR7 memory chips in early 2024". TechSpot. 2023-06-30. Retrieved 2023-06-30.
  5. ↑ "Samsung develops industry's first GDDR7 DRAM with 1.5 TBps bandwidth". Notebookcheck. 2023-07-19. Retrieved 2023-07-31.
  6. ↑ Memory Technology 2021: Trends & Challenges (PDF), 2021, retrieved 2023-07-31
  7. ↑ Smith, Ryan. "Samsung Completes Initial GDDR7 Development: First Parts to Reach Up to 32Gbps/pin". www.anandtech.com. Retrieved 2023-07-31.
  8. ↑ Anton Shilov (2023-07-19). "GDDR7 Arrives: Samsung Outs World's First Chip, 32 GT/s for Next-Gen GPUs". Tom's Hardware. Retrieved 2023-10-06.
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